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PDTC123JT,215 | NEXPERIA

NEXPERIA PDTC123JT,215

PDTC123JT Series 50 V 100 mA SMT NPN Resistor-Equipped Transistor - SOT-23


Ordering Info

In Stock: 1923000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.0095

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000-1922999 $0.1458
1923000+ $0.1312


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Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.36
Collector Current-Max (IC) .1
Collector-base Capacitance-Max 3.5
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation Ambient-Max .25
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max .3