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PDTD143ETR | NEXPERIA

NEXPERIA PDTD143ETR

Small SignalBipolarTransistor,0.1AI(C),50VV(BR)CEO,1-Element,NPN,Silicon,TO-236AB


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.0075

ECCN: EAR99

COO: CN

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) .5
Collector-emitter Voltage-Max 50
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 60
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 225