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PEMD9,115 | NEXPERIA

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NEXPERIA PEMD9,115

PEMD9 Series 50 V 100 mA NPN/PNP Resistor-Equipped Transistor - SOT-666


Ordering Info

In Stock: 332000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.21.00

ECCN: EAR99

COO: MY

Quantity Cost
4000-331999 $0.0827
332000+ $0.0772


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Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) .1
Collector-emitter Voltage-Max 50
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN AND PNP
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON