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PEMH2,115 | NEXPERIA

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NEXPERIA PEMH2,115

SOT666/ NPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm/1


Ordering Info

In Stock: 0

Package Quantity: 4000

Quantity Cost
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Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) .1
Collector-emitter Voltage-Max 50
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON