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PESD3V3L2UM,315 | NEXPERIA

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NEXPERIA PESD3V3L2UM,315

Small Signal BipolarTransistor,0.1AI(C),45VV(BR)CEO, 1-Element, NPN,Silicon,TO-236AB


Ordering Info

In Stock: 20000 Delivery

MOQ: 10000

Package Quantity: 10000

HTS Code: 8541.10.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
10000-19999 $0.054
20000+ $0.0504


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Electrical Characteristics

Breakdown Voltage-Max 5.88
Breakdown Voltage-Min 5.32
Case Connection ANODE
Configuration COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PBCC-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max .25
Rep Pk Reverse Voltage-Max 3.3
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30