Request Quote













Request Quote


PESD3V3L2UM,315 | NEXPERIA

NEXPERIA PESD3V3L2UM,315

Small Signal BipolarTransistor,0.1AI(C),45VV(BR)CEO, 1-Element, NPN,Silicon,TO-236AB


Ordering Info

In Stock: 0

MOQ: 10000

Package Quantity: 10000

HTS Code: 8541.10.0080

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
10000 -

Electrical Characteristics

Breakdown Voltage-Max 5.88
Breakdown Voltage-Min 5.32
Case Connection ANODE
Configuration COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PBCC-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max .25
Rep Pk Reverse Voltage-Max 3.3
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30