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PESD3V3S2UQ,115 | NXP

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NXP PESD3V3S2UQ,115

Trans Voltage Suppressor Diode, 150W,3.3VV(RWM),Unidirectional, 2 Element, Silicon


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MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Breakdown Voltage-Max 6
Breakdown Voltage-Min 5.2
Configuration COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 150
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.425
Rep Pk Reverse Voltage-Max 3.3
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30