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Electrical Characteristics
| Breakdown Voltage-Max | 7.14 |
| Breakdown Voltage-Min | 6.46 |
| Case Connection | ANODE |
| Configuration | COMMON ANODE, 2 ELEMENTS |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 Code | R-PBCC-N3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Non-rep Peak Rev Power Dis-Max | 30 |
| Number of Elements | 2 |
| Number of Terminals | 3 |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity | UNIDIRECTIONAL |
| Power Dissipation-Max | .25 |
| Rep Pk Reverse Voltage-Max | 5 |
| Surface Mount | YES |
| Technology | AVALANCHE |
| Terminal Finish | Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 30 |