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PHB32N06LT,118 | NEXPERIA

NEXPERIA PHB32N06LT,118

PHB32N06LT Series 60 V 34 A N-Channel TrenchMOS Logic Level FET - D2PAK-3


Ordering Info

In Stock: 1600 Delivery

MOQ: 800

Package Quantity: 800

HTS Code: 8541.29.00.55

ECCN: EAR99

COO: PH

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
800-1599 $4.36
1600+ $3.96


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 100
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 34
Drain-source On Resistance-Max .043
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 136
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON