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PHB32N06LT,118 | NEXPERIA

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NEXPERIA PHB32N06LT,118

PHB32N06LT Series 60 V 34 A N-Channel TrenchMOS Logic Level FET - D2PAK-3


Ordering Info

In Stock: 9600 Delivery

MOQ: 800

Package Quantity: 800

HTS Code: 8541.29.00

ECCN: EAR99

COO: PH

Quantity Cost
800-9599 $0.5357
9600+ $0.50


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 100
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 34
Drain-source On Resistance-Max .043
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 136
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON