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PMBFJ308 | NXP

NXP PMBFJ308

RF Small Signal Field-EffectTransistor,1-Element,Very High Frequency Band,Silicon,N-Channel,Junction FET, TO-236AB


Ordering Info

In Stock: 497

MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 25
FET Technology JUNCTION
Feedback Cap-Max (Crss) 2.5
Highest Frequency Band VERY HIGH FREQUENCY BAND
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.25
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON