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PMCXB900UEZ | NEXPERIA

NEXPERIA PMCXB900UEZ

PMCX900UEZ Series 20 V 620 mOhm 265 mW N/P Channel TrenchMOS FET - DFN1010B-6


Ordering Info

In Stock: 0

MOQ: 5000

Package Quantity: 5000

HTS Code: 8541.29.0055

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
5000 -

Electrical Characteristics

Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (ID) .6
Drain-source On Resistance-Max .62
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON