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Electrical Characteristics
| Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 |
| Drain Current-Max (ID) | 3.6 |
| Drain-source On Resistance-Max | 0.067 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | S-PDSO-N6 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 14.4 |
| Reference Standard | IEC-60134 |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |