Request Quote













Request Quote


PMEG100V060ELPDZ | NEXPERIA

NEXPERIA PMEG100V060ELPDZ

Small Signal Field-Effect Transistor,0.6AI(D),20V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 0

MOQ: 1500

Package Quantity: 1500

HTS Code: 8541.10.00

ECCN: EAR99

COO: MY

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1500 -

Electrical Characteristics

Application EFFICIENCY
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) .84
JESD-30 Code R-PDSO-F3
Non-rep Pk Forward Current-Max 130
Number of Elements 1
Number of Phases 1
Number of Terminals 3
Operating Temperature-Max 175
Operating Temperature-Min -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 1.66
Reference Standard AEC-Q101; IEC-60134
Rep Pk Reverse Voltage-Max 100
Reverse Current-Max .45
Reverse Recovery Time-Max .008
Surface Mount YES
Technology SCHOTTKY
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED