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PMGD175XNEX | NEXPERIA

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NEXPERIA PMGD175XNEX

Small Signal Field-Effect Transistor, 0.87AI(D),30V, 2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: MY

Quantity Cost
3000-5999 $0.1259
6000+ $0.1175


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Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) .87
Drain-source On Resistance-Max .252
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON