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PMPB85ENEA/FX | NEXPERIA

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NEXPERIA PMPB85ENEA/FX


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

COO: CN

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Quantity Cost
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Electrical Characteristics

Avalanche Energy Rating (Eas) 12.6
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 3
Drain-source On Resistance-Max .095
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 12
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON