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PMV250EPEAR | NEXPERIA

NEXPERIA PMV250EPEAR

PMV250EPEAR Series 40 V 240 mOhm 480 mW 6 nC P-Channel TrenchMOS FET - SOT-23


Ordering Info

In Stock: 126000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000-125999 $0.0965
126000+ $0.0891


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40
Drain Current-Max (ID) 1.5
Drain-source On Resistance-Max .24
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON