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PMXB43UNEZ | NEXPERIA

NEXPERIA PMXB43UNEZ

Small Signal Field-Effect Transistor, 3.2AI(D),20V, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 0

MOQ: 5000

Package Quantity: 5000

HTS Code: 8541.29.0065

ECCN: EAR99

COO: CN

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
5000 -

Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (ID) 3.2
Drain-source On Resistance-Max .054
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON