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Ordering Info
In Stock: 0
MOQ: 10000
Package Quantity: 10000
HTS Code: 8541.21.0095
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 10000 | - |
Electrical Characteristics
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 30 |
| Drain Current-Max (ID) | .9 |
| Drain-source On Resistance-Max | .47 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PBCC-N3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Polarity/Channel Type | N-CHANNEL |
| Reference Standard | IEC-60134 |
| Surface Mount | YES |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |