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PSMN013-80YS,115 | NEXPERIA

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NEXPERIA PSMN013-80YS,115

Power Field-Effect Transistor,60AI(D),80V,0.00129ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,MO-235


Ordering Info

In Stock: 3000 Delivery

MOQ: 1500

Package Quantity: 1500

HTS Code: 8541.29.00

ECCN: EAR99

COO: PH

Quantity Cost
1500-2999 $0.4929
3000+ $0.46


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Electrical Characteristics

Avalanche Energy Rating (Eas) 70
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80
Drain Current-Max (ID) 60
Drain-source On Resistance-Max .00129
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 233
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON