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PSMN2R6-40YS,115 | NEXPERIA

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NEXPERIA PSMN2R6-40YS,115

PSMN2R6 Series 40 V 5.3 mOhm 63 nC N-Channel Logic Level MOSFET - LFPAK-4


Ordering Info

In Stock: 10500 Delivery

MOQ: 1500

Package Quantity: 1500

HTS Code: 8541.29.00

ECCN: EAR99

COO: MY

Quantity Cost
1500-10499 $0.8071
10500+ $0.7533


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Electrical Characteristics

Avalanche Energy Rating (Eas) 179
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40
Drain Current-Max (ID) 100
Drain-source On Resistance-Max .0028
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 651
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON