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PSMN3R8-100BS,118 | NEXPERIA

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NEXPERIA PSMN3R8-100BS,118

PSMN3R8 Series 100 V 3.9 mOhm N-Channel Standard Level MOSFET - D2PAK-3


Ordering Info

In Stock: 1600 Delivery

MOQ: 800

Package Quantity: 800

HTS Code: 8541.29.00

ECCN: EAR99

COO: PH

Quantity Cost
800-1599 $2.06
1600+ $1.92


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Electrical Characteristics

Avalanche Energy Rating (Eas) 537
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (ID) 120
Drain-source On Resistance-Max .0039
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 680
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON