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PSMN7R5-60YLX | NEXPERIA

NEXPERIA PSMN7R5-60YLX

Power Field-Effect Transistor, 86A I(D),60V,0.0087ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, MO-235


Ordering Info

In Stock: 10500 Delivery

MOQ: 1500

Package Quantity: 1500

HTS Code: 8541.29.0055

ECCN: EAR99

COO: PH

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1500-10499 $5.00
10500+ $4.50


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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 76.5
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 86
Drain-source On Resistance-Max .0087
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 346
Reference Standard IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON