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PSMN7R5-60YLX | NEXPERIA

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NEXPERIA PSMN7R5-60YLX

Power Field-Effect Transistor, 86A I(D),60V,0.0087ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, MO-235


Ordering Info

In Stock: 15000 Delivery

MOQ: 1500

Package Quantity: 1500

HTS Code: 8541.29.00

ECCN: EAR99

COO: PH

Quantity Cost
1500-14999 $0.45
15000+ $0.42


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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 76.5
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 86
Drain-source On Resistance-Max .0087
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 346
Reference Standard IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON