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PTVS30VS1UR,115 | NXP

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NXP PTVS30VS1UR,115

Trans Voltage Suppressor Diode, 400W,30VV(RWM),Unidirectional, 1 Element, Silicon


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

Quantity Cost
3000 -

Electrical Characteristics

Breakdown Voltage-Max 36.8
Breakdown Voltage-Min 33.3
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 30
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30