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PUMD12,115 | NEXPERIA

NEXPERIA PUMD12,115

PUMD12 Series 50 V 100 mA SMT NPN/PNP Digital Transistor - SOT-363-6


Ordering Info

In Stock: 1068000 Delivery

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: MY

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
6000-1067999 $0.0322
1068000+ $0.0297


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Electrical Characteristics

Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) .1
Collector-emitter Voltage-Max 50
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN AND PNP
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON