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Electrical Characteristics
| Additional Feature | ULTRA LOW CAPACITANCE |
| Breakdown Voltage-Max | 7.2 |
| Breakdown Voltage-Min | 6.4 |
| Configuration | COMPLEX |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 Code | S-PDSO-N6 |
| JESD-609 Code | e4 |
| Moisture Sensitivity Level | 1 |
| Non-rep Peak Rev Power Dis-Max | 100 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Operating Temperature-Max | 85 |
| Operating Temperature-Min | -30 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | SMALL OUTLINE |
| Polarity | UNIDIRECTIONAL |
| Reference Standard | IEC-60134 |
| Rep Pk Reverse Voltage-Max | 5.5 |
| Surface Mount | YES |
| Technology | AVALANCHE |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |