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RUC002N05T116 | ROHM SEMICONDUCTOR

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ROHM SEMICONDUCTOR RUC002N05T116

RUC002N05 Series 50 V ± 200 mA 2.2 Ohm N-Channel Mosfet - SOT-23-3 (SST3)


Ordering Info

In Stock: 27000 Delivery

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: TH

Quantity Cost
6000-26999 $0.0399
27000+ $0.0372


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50
Drain Current-Max (Abs) (ID) 0.2
Drain Current-Max (ID) 0.2
Drain-source On Resistance-Max 2.4
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON