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RUM002N02T2L | ROHM SEMICONDUCTOR

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ROHM SEMICONDUCTOR RUM002N02T2L

RUM002N02 Series 20 V 1.2 Ohm 200 mA Surface Mount N-Channel MOSFET - VMT-3


Ordering Info

In Stock: 48000 Delivery

MOQ: 8000

Package Quantity: 8000

HTS Code: 8541.21.00

ECCN: EAR99

COO: KR

Quantity Cost
8000-47999 $0.0383
48000+ $0.0357


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 0.2
Drain Current-Max (ID) 0.2
Drain-source On Resistance-Max 1.4
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F3
JESD-609 Code e2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.15
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN COPPER
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON