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SBAS21DW5T1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR SBAS21DW5T1G

BAS21DW5T1G Series 250 V 200 mA Low Leakage Switching Diode - SOT-353


Ordering Info

In Stock: 270000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.10.00.80

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000-269999 $0.1351
270000+ $0.1216


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Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1
JESD-30 Code R-PDSO-G5
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 0.625
Number of Elements 2
Number of Terminals 5
Operating Temperature-Max 150
Operating Temperature-Min -55
Output Current-Max 0.2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.385
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 250
Reverse Recovery Time-Max 0.05
Sub Category Rectifier Diodes
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED