Request Quote













Request Quote


SCT2H12NZGC11 | ROHM SEMICONDUCTOR

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

ROHM SEMICONDUCTOR SCT2H12NZGC11

SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM


Ordering Info

In Stock: 14280 Delivery

MOQ: 60

Package Quantity: 30

HTS Code: 8541.29.00

ECCN: EAR99

COO: TH

Quantity Cost
60-14279 $4.56
14280+ $4.25


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1700
Drain Current-Max (ID) 3.7
Drain-source On Resistance-Max 1.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 9.2
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE