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SCT3080ALGC11 | ROHM SEMICONDUCTOR

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ROHM SEMICONDUCTOR SCT3080ALGC11

SCT3080AL Series 650 V 30 A 104 mOhm N-Channel SiC Power Mosfet - TO-247N


Ordering Info

In Stock: 336 Delivery

MOQ: 18

Package Quantity: 1

HTS Code: 8541.29.00

ECCN: EAR99

COO: TH

Quantity Cost
18-335 $8.27
336+ $7.72


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650
Drain Current-Max (ID) 30
Drain-source On Resistance-Max 0.104
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 75
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE