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SCT30N120 | ST MICROELECTRONICS

ST MICROELECTRONICS SCT30N120

Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247


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Electrical Characteristics

Configuration Single
Drain Current-Max (Abs) (ID) 40
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Operating Temperature-Max 200
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 270
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED