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ST MICROELECTRONICS SCT30N120

Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247

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Quantity	Cost
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Configuration	Single
Drain Current-Max (Abs) (ID)	40
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 Code	e3
Operating Temperature-Max	200
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	270
Sub Category	FET General Purpose Power
Surface Mount	NO
Terminal Finish	MATTE TIN
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED