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Electrical Characteristics
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Case Connection | SUBSTRATE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 10 |
| Drain Current-Max (ID) | .05 |
| Drain-source On Resistance-Max | 70 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | .5 |
| JEDEC-95 Code | TO-72 |
| JESD-30 Code | O-MBCY-W4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Surface Mount | NO |
| Terminal Form | WIRE |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |