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Ordering Info
In Stock: 0
MOQ: 1000
Lead Time: 12 weeks
Package Quantity: 1000
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
Quantity | Cost |
---|---|
1000-2999 | $7.71 |
3000-5999 | $7.16 |
6000+ | $6.96 |
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Electrical Characteristics
Additional Feature | LOGIC LEVEL COMPATIBLE |
Case Connection | SUBSTRATE |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 25 |
Drain Current-Max (Abs) (ID) | .05 |
Drain Current-Max (ID) | .16 |
Drain-source On Resistance-Max | 5 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 5 |
JEDEC-95 Code | TO-72 |
JESD-30 Code | O-MBCY-W4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 125 |
Package Body Material | METAL |
Package Shape | ROUND |
Package Style | CYLINDRICAL |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 1.2 |
Power Dissipation-Max (Abs) | .3 |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Form | WIRE |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |