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Electrical Characteristics
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Case Connection | SUBSTRATE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 25 |
| Drain Current-Max (Abs) (ID) | .05 |
| Drain Current-Max (ID) | .16 |
| Drain-source On Resistance-Max | 5 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 5 |
| JEDEC-95 Code | TO-72 |
| JESD-30 Code | O-MBCY-W4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 125 |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 1.2 |
| Power Dissipation-Max (Abs) | .3 |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Form | WIRE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |