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Ordering Info
In Stock: 0
MOQ: 25
Package Quantity: 25
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Quantity | Cost |
---|---|
25 | - |
Electrical Characteristics
Case Connection | SOURCE |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 65 |
Drain Current-Max (Abs) (ID) | 4 |
Drain Current-Max (ID) | 4 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code | R-PDFM-F2 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 200 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 74 |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Form | FLAT |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |