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SD57030 | ST MICROELECTRONICS

ST MICROELECTRONICS SD57030

RF Power Field-Effect Transistor,1-Element,UltraHigh Frequency Band,Silicon,N-Channel,Metal-oxide Semiconductor FET


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 25

Package Quantity: 25

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
25 -

Electrical Characteristics

Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65
Drain Current-Max (Abs) (ID) 4
Drain Current-Max (ID) 4
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 74
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON