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Learn more about ECAD Model here.Electrical Characteristics
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 |
Drain Current-Max (Abs) (ID) | 1.4 |
Drain Current-Max (ID) | 1.4 |
Drain-source On Resistance-Max | .132 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | .5 |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |