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SI2318CDS-T1-GE3 | VISHAY

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VISHAY SI2318CDS-T1-GE3

Zener Diode, 36V V(Z), 5%,1W,Silicon,Unidirectional


RoHS Compliant

Ordering Info

In Stock: 675000 Delivery

MOQ: 3000

Package Quantity: 3000

ECCN: EAR99

Quantity Cost
3000-674999 $0.1613
675000+ $0.1493


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40
Drain Current-Max (Abs) (ID) 5.6
Drain Current-Max (ID) 5.6
Drain-source On Resistance-Max .042
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Operating Temperature-Min -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON