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SI4056DY-T1-GE3 | VISHAY

VISHAY SI4056DY-T1-GE3

Small Signal Field-Effect Transistor, 7.3A I(D),100V, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, MS-012AA


Ordering Info

In Stock: 0

MOQ: 1

Lead Time: 99 weeks

Package Quantity: 2500

ECCN: EAR99

COO: CN

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (ID) 7.3
Drain-source On Resistance-Max .023
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON