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SI4168DY-T1-GE3 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI4168DY-T1-GE3

Si4168DY Series 30 V 24 A 5.7 mOhm Surface Mount P-Channel MOSFET - SOIC-8


Ordering Info

In Stock: 2500 Delivery

MOQ: 2500

Package Quantity: 2500

HTS Code: 2500

ECCN: 8541.29.00

COO: CN

Subject to tariff fees.

Quantity Cost
2500+ $0.5178


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 24
Drain Current-Max (ID) 24
Drain-source On Resistance-Max 0.0057
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5.7
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON