Request Quote













Request Quote


SI4435DYTRPBF | INFINEON

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

INFINEON SI4435DYTRPBF

Single P-Channel 30 V 0.02 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8


Ordering Info

In Stock: 8000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
4000-7999 $0.2571
8000+ $0.24


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 8
Drain-source On Resistance-Max 0.02
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 50
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON