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Ordering Info
In Stock: 0
MOQ: 59
Package Quantity: 59
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 59+ | $1.85 |
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Electrical Characteristics
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 |
| Drain Current-Max (Abs) (ID) | 4.5 |
| Drain-source On Resistance-Max | 0.055 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Power Dissipation-Max (Abs) | 2.4 |
| Pulsed Drain Current-Max (IDM) | 30 |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |