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SI4953DY | VISHAY/SILICONIX

VISHAY/SILICONIX SI4953DY

Power Field-Effect Transistor, 4.9AI(D),30V,0.053ohm, 2-Element,P-Channel,Silicon,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 33

MOQ: 1

Package Quantity: 1

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Quantity Cost
1+ $0.337


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Electrical Characteristics

Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 4.9
Drain-source On Resistance-Max 0.053
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 2
Pulsed Drain Current-Max (IDM) 30
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON