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SI5475DC-T1 | VISHAY/SILICONIX

VISHAY/SILICONIX SI5475DC-T1

Small Signal Field-Effect Transistor, 5.5AI(D),12V,1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 37

MOQ: 1

Package Quantity: 1

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12
Drain Current-Max (ID) 5.5
Drain-source On Resistance-Max 0.031
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C8
JESD-609 Code e0
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON