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SI6415DQ-T1-GE3 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI6415DQ-T1-GE3

P-Channel 30 V 19 mO 47 nC SMT TrenchFET® Power Mosfet - TSSOP-8


RoHS Compliant

Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 3000

ECCN: 8541.29.00

COO: CN

Subject to tariff fees.

Quantity Cost
3000+ $0.9138


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 6.5
Drain Current-Max (ID) 6.5
Drain-source On Resistance-Max 0.019
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5
Pulsed Drain Current-Max (IDM) 30
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON