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SI7108DN-T1-E3 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI7108DN-T1-E3

Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8


Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 3000

ECCN: 8541.29.00

COO: CN

Subject to tariff fees.

Quantity Cost
3000+ $1.04


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Electrical Characteristics

Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 24
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 14
Drain Current-Max (ID) 14
Drain-source On Resistance-Max 0.0049
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.8
Pulsed Drain Current-Max (IDM) 60
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON