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SI7121ADN-T1-GE3 | VISHAY/SILICONIX

VISHAY/SILICONIX SI7121ADN-T1-GE3

P Channel 30 V 15 mO 3.5 W TrenchFET Power Mosfet - PowerPak 1212-8 (3x3)


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000-5999 $0.3233
6000+ $0.2985


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Electrical Characteristics

Avalanche Energy Rating (Eas) 9.8
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 18
Drain-source On Resistance-Max 0.015
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 50
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON