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SI7121ADN-T1-GE3 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI7121ADN-T1-GE3

P Channel 30 V 15 mO 3.5 W TrenchFET Power Mosfet - PowerPak 1212-8 (3x3)


Ordering Info

In Stock: 81000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000-80999 $1.15
81000+ $1.07


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Electrical Characteristics

Avalanche Energy Rating (Eas) 9.8
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 18
Drain-source On Resistance-Max 0.015
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 50
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON