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SI7129DN-T1-GE3 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI7129DN-T1-GE3

P-Channel 30 V 0.0114 O 71 nC Surface Mount Power Mosfet - PowerPAK-1212-8


Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

COO: CN

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Quantity Cost
3000+ $0.4342


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Electrical Characteristics

Avalanche Energy Rating (Eas) 31.25
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 35
Drain Current-Max (ID) 35
Drain-source On Resistance-Max 0.0114
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 52.1
Pulsed Drain Current-Max (IDM) 60
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON