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SI7658ADP-T1-GE3 | VISHAY

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VISHAY SI7658ADP-T1-GE3


Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

ECCN: N.E.

Quantity Cost
3000+ $0.9507


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Electrical Characteristics

Avalanche Energy Rating (Eas) 125
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 60
Drain Current-Max (ID) 36
Drain-source On Resistance-Max 0.0028
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83
Pulsed Drain Current-Max (IDM) 80
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON