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SI7860DP-T1 | VISHAY/SILICONIX

VISHAY/SILICONIX SI7860DP-T1

Power Field-Effect Transistor, 11AI(D),30V,0.008ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET


Ordering Info

In Stock: 11898

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

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Electrical Characteristics

Avalanche Energy Rating (Eas) 45
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 11
Drain-source On Resistance-Max 0.008
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 50
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON