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SI7956DP-T1-GE3 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI7956DP-T1-GE3

Si7956DP Series 150 V 0.105 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8


Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 3000

ECCN: 8541.29.00

COO: CN

Subject to tariff fees.

Quantity Cost
3000+ $1.84


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Electrical Characteristics

Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150
Drain Current-Max (Abs) (ID) 2.6
Drain Current-Max (ID) 2.6
Drain-source On Resistance-Max 0.105
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.5
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON