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SI7956DP-T1-GE3 | VISHAY/SILICONIX

VISHAY/SILICONIX SI7956DP-T1-GE3

Si7956DP Series 150 V 0.105 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8


Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000+ $2.09


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Electrical Characteristics

Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150
Drain Current-Max (Abs) (ID) 2.6
Drain Current-Max (ID) 2.6
Drain-source On Resistance-Max 0.105
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.5
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON