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SI8429DB-T1-E1 | VISHAY/SILICONIX

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VISHAY/SILICONIX SI8429DB-T1-E1

Single P-Channel 8 V 35 mOhms Surface Mount Power Mosfet - MICRO-FOOT


Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

HTS Code: 3000

ECCN: 8541.29.00

COO: CN

Subject to tariff fees.

Quantity Cost
3000+ $0.4569


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 8
Drain Current-Max (Abs) (ID) 11.7
Drain Current-Max (ID) 7.8
Drain-source On Resistance-Max 0.098
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PBGA-X4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style GRID ARRAY
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 6.25
Pulsed Drain Current-Max (IDM) 25
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form UNSPECIFIED
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON